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| NJT4030P Preferred Device Bipolar Power Transistors PNP Silicon Features * Collector -Emitter Sustaining Voltage - * * * * * * VCEO(sus) = 40 Vdc (Min) @ IC = 10 mAdc High DC Current Gain - = 200 (Min) @ IC = 1.0 Adc hFE = 100 (Min) @ IC = 3.0 Adc Low Collector -Emitter Saturation Voltage - VCE(sat) = 0.200 Vdc (Max) @ IC = 1.0 Adc = 0.500 Vdc (Max) @ IC = 3.0 Adc SOT-223 Surface Mount Packaging Epoxy Meets UL 94, V-0 @ 0.125 in ESD Ratings: Human Body Model, 3B; > 8000 V Machine Model, C; > 400 V These are Pb-Free Devices http://onsemi.com PNP TRANSISTOR 3.0 AMPERES 40 VOLTS, 2.0 WATTS C 2,4 B1 E3 Schematic MARKING DIAGRAM SOT-223 CASE 318E STYLE 1 1 A Y W 4030P G AYW 4030PG = Assembly Location Year = Work Week = Specific Device Code = Pb-Free Package PIN ASSIGNMENT 4 C B 1 C 2 E 3 Top View Pinout ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2007 January, 2007 - Rev. 0 1 Publication Order Number: NJT4030P/D NJT4030P II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Symbol VCEO VCB VEB IB Value 40 40 Unit Vdc Vdc Vdc Adc Adc W Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage 6.0 1.0 3.0 5.0 Base Current - Continuous Collector Current - Continuous Collector Current - Peak IC Total Power Dissipation Total PD @ TA = 25C mounted on 1" sq. (645 sq. mm) Collector pad on FR-4 bd material Total PD @ TA = 25C mounted on 0.012" sq. (7.6 sq. mm) Collector pad on FR-4 bd material Operating and Storage Junction Temperature Range PD 2.0 0.80 TJ, Tstg - 55 to + 150 C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL CHARACTERISTICS Characteristic Symbol RqJA RqJA TL Max 64 155 Unit Thermal Resistance, Junction-to-Case - Junction-to-Ambient on 1" sq. (645 sq. mm) Collector pad on FR-4 bd material - Junction-to-Ambient on 0.012" sq. (7.6 sq. mm) Collector pad on FR-4 bd material Maximum Lead Temperature for Soldering Purposes, 1/8" from case for 5 seconds C/W 260 C ORDERING INFORMATION Device NJT4030PT1G NJT4030PT3G Package SOT-223 (Pb-Free) SOT-223 (Pb-Free) Shipping 1000 / Tape & Reel 4000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 PD, POWER DISSIPATION (W) II III I I I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I III I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIII I III I III II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I II I III I I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I III I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I III I III II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I III I III I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 2. fT = |hFE| * ftest DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (Note 1) OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted) Current-Gain - Bandwidth Product (Note 2) (IC = 500 mA, VCE = 10 V, Ftest = 1.0 MHz) Input Capacitance (VEB = 5.0 Vdc, f = 1.0 MHz) Output Capacitance (VCB = 10 Vdc, f = 1.0 MHz) DC Current Gain (IC = 0.5 Adc, VCE = 1.0 Vdc) (IC = 1.0 Adc, VCE = 1.0 Vdc) (IC = 3.0 Adc, VCE = 1.0 Vdc) Base-Emitter On Voltage (IC = 1.0 Adc, VCE = 2.0 Vdc) Base-Emitter Saturation Voltage (IC = 1.0 Adc, IB = 0.1 Adc) Collector-Emitter Saturation Voltage (IC = 0.5 Adc, IB = 5.0 mAdc) (IC = 1.0 Adc, IB = 10 mAdc) (IC = 3.0 Adc, IB = 0.3 Adc) Emitter Cutoff Current (VBE = 6.0 Vdc) Collector Cutoff Current (VCB = 40 Vdc) Emitter-Base Voltage (IE = 50 mAdc, IC = 0 Adc) Collector-Emitter Sustaining Voltage (IC = 10 mAdc, IB = 0 Adc) Characteristic 0.5 1.0 1.5 2.0 2.5 0 25 50 Figure 1. Power Derating TC TA TJ, TEMPERATURE (C) http://onsemi.com 75 NJT4030P 3 100 125 VCEO(sus) Symbol VCE(sat) VBE(sat) VBE(on) VEBO ICBO IEBO Cob hFE Cib fT 150 Min 220 200 100 6.0 40 - - - - - - - - - - Typ 160 130 40 - - - - - - - - - - - - 0.150 0.200 0.500 Max - 400 - 100 100 1.0 1.0 - - - - - nAdc nAdc MHz Unit Vdc Vdc Vdc Vdc Vdc pF pF - NJT4030P TYPICAL CHARACTERISTICS 600 500 400 25C 300 200 100 0 0.001 0.01 0.1 1 10 -40C 150C VCE = 1 V hFE, DC CURRENT GAIN 700 600 500 400 300 200 100 0 0.001 0.01 0.1 1 10 -40C 25C VCE = 4 V 150C hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 2. DC Current Gain 1 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) IC/IB = 10 25C 0.1 150C -40C 1 IC/IB = 50 Figure 3. DC Current Gain 150C 25C -40C 0.1 0.01 0.001 0.001 0.01 0.1 1 10 0.01 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 4. Collector-Emitter Saturation Voltage 1 VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 Figure 5. Collector-Emitter Saturation Voltage VBE(on), EMITTER-BASE VOLTAGE (V) VCE = 2 V IC = 2 A 1A 0.1 0.1 A 0.5 A -40C 25C 150C 0.01 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 0.001 0.01 0.1 1 10 IB, BASE CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 6. Collector Saturation Region Figure 7. VBE(on) Voltage http://onsemi.com 4 NJT4030P TYPICAL CHARACTERISTICS 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 1.2 IC/IB = 10 VBE(sat), EMITTER-BASE SATURATION VOLTAGE (V) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 IC/IB = 50 -40C VBE(sat), EMITTER-BASE SATURATION VOLTAGE (V) -40C 25C 150C 25C 150C 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 8. Base-Emitter Saturation Voltage 350 Cibo, INPUT CAPACITANCE (pF) 300 250 200 150 100 50 0 0 1 2 3 4 5 6 100 Cobo, OUTPUT CAPACITANCE (pF) 80 60 40 20 0 Figure 9. Base-Emitter Saturation Voltage TJ = 25C ftest = 1 MHz TJ = 25C ftest = 1 MHz 0 5 10 15 20 25 30 35 VEB, EMITTER BASE VOLTAGE (V) VCB, COLLECTOR BASE VOLTAGE (V) Figure 10. Input Capacitance 200 160 140 120 100 80 60 40 20 0 IC, COLLECTOR CURRENT (A) fTau, CURRENT BANDWIDTH PRODUCT (MHz) 180 TJ = 25C ftest = 1 MHz VCE = 10 V 10 Figure 11. Output Capacitance 0.5 ms 1 10 ms 100 ms 0.1 1 ms 0.001 0.01 0.1 1 0.01 1 10 VCE, COLLECTOR-EMITTER VOLTAGE (V) 100 IC, COLLECTOR CURRENT (A) Figure 12. Current-Gain Bandwidth Product Figure 13. Safe Operating Area http://onsemi.com 5 NJT4030P PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE L D b1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. MILLIMETERS NOM MAX 1.63 1.75 0.06 0.10 0.75 0.89 3.06 3.20 0.29 0.35 6.50 6.70 3.50 3.70 2.30 2.40 0.94 1.05 1.75 2.00 7.00 7.30 10 - INCHES NOM 0.064 0.002 0.030 0.121 0.012 0.256 0.138 0.091 0.037 0.069 0.276 - 4 HE 1 2 3 E e1 b e A q L1 C DIM A A1 b b1 c D E e e1 L1 HE q MIN 1.50 0.02 0.60 2.90 0.24 6.30 3.30 2.20 0.85 1.50 6.70 0 MIN 0.060 0.001 0.024 0.115 0.009 0.249 0.130 0.087 0.033 0.060 0.264 0 MAX 0.068 0.004 0.035 0.126 0.014 0.263 0.145 0.094 0.041 0.078 0.287 10 0.08 (0003) A1 SOLDERING FOOTPRINT* 3.8 0.15 2.0 0.079 2.3 0.091 2.3 0.091 6.3 0.248 2.0 0.079 1.5 0.059 mm inches SCALE 6:1 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 6 NJT4030P/D |
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